PART |
Description |
Maker |
V53C8128H V53C8128H35 V53C8128H40 V53C8128H45 V53C |
ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
V53C16129H V53C16129HK60 |
High performance 128K x 16 EDO page mode CMOS dynamic RAM HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic Corp] Mosel Vitelic, Corp
|
FM27C010 FM27C010N120 FM27C010N150 FM27C010N90 FM2 |
1,048,576-Bit 128K x 8 High Performance CMOS EPROM 1/048/576-Bit 128K x 8 High Performance CMOS EPROM CONN HEADER .100 72POS DUAL TIN 128K X 8 OTPROM, 90 ns, PDIP32 CONN HEADER .100 72POS DL GOLD
|
FAIRCHILD[Fairchild Semiconductor] Davies Molding, LLC FAIRCHILD SEMICONDUCTOR CORP
|
EM23C1000 |
High Performance 128K ? 8 CMOS ROM(楂???奖M浣??128K ? 8锛?MOS ROM)
|
ELAN Microelctronics Corp .
|
NM27C010 27C010 |
1,048,576-Bit (128K x 8) High Performance CMOS EPROM 1,048,576位(128K的8)高性能CMOS存储 1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
V53C8258H V53C8258H35 V53C8258H40 V53C8258H45 V53C |
HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V53C808H V53C808H35 V53C808H40 V53C808H45 V53C808H |
HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp Mosel Vitelic, Corp.
|
Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http:// SIEMENS A G SIEMENS AG
|
75K62100 IDT75K6210 IDT75K62100 |
128K x72 Network Search Engine Network Search Engines (NSE) with High Performance Interface NETWORK SEARCH ENGINE 128K x 72 Entries
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
W24L011AQ-10 W24L011AQ-12 W24L011AQ-15 W24L011AT-1 |
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32 TRANS PNP W/RES 60HFE NEW S TYPE 128K X 8 STANDARD SRAM, 15 ns, PDSO32 Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No JT 55C 55#22M SKT PLUG HIGH SPEED SRAM
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|